Açıklama
Type Designator: 3N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 63 pF
Maximum Drain-Source On-State Resistance (Rds): 4.1 Ohm
Package: TO-220, TO-262, TO-251, TO-252, TO-220F, TO-220F1
İncelemeler
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